This issue has a special focus on power device technologies in view of the 2010 International Symposium on Power Semiconductor Devices and ICs (ISPSD). Simulations focus on silicon-based devices and on the new areas opened up by silicon carbide (SiC) and gallium nitride (GaN). In addition, there is a concise article on a new oxidation feature in Sentaurus Process Kinetic Monte Carlo.

This edition is dedicated to the new features, capabilities and enhancements in TCAD Sentaurus Version D-2010.03. Three-dimensional simulation and new models for advanced technologies are well represented in both process and device simulation.

This issue focuses on two topics of concern for current and future development of CMOS devices: the simulation of random dopant fluctuation effects in TCAD Sentaurus and the application of kinetic Monte Carlo simulation to ultrashallow junction formation.

This edition presents two articles. The first article examines the manufacturing, reliability, and performance analysis of 3D integration structures using through-silicon vias (TSVs), with the simulations performed using Fammos TX. The second article presents the simulation of GaAs-based heterojunction bipolar transistors (HBTs) and pseudomorphic high electron mobility transistors (PHEMTs).

This issue highlights the new features and enhancements in Version C-2009.06 of TCAD Sentaurus. There is special emphasis on the developments in three-dimensional process and device simulations using Sentaurus Process and Sentaurus Device. The second article introduces the band-structure calculator available in Sentaurus Device Monte Carlo in the context of the fundamentals of strain engineering.

This issue focuses on two main areas. The first article reviews the progress achieved in the simulation of multi-junction solar cells, which hold the world record in efficiency and are being used in industrial concentrator photovoltaic installations. The second article highlights the characterization and design of radiation-hardened electronics by looking at recent advances in 3D simulations of SRAM cells.

This newsletter presents 3D simulations of 45-nm CMOS technology devices, the simulation of phase-change memory using Sentaurus Device, performance and reliability trade-offs in metal filling pattern design using Fammos TX and Raphael™, and increased robustness of SiC device simulations with numeric enhancements and material parameter calibration.

This issue highlights the developments and enhancements in Version A-2008.09 of TCAD Sentaurus, TSUPREM-4™, and Medici.

The lead article presents the objectives and technical approach of the European ATOMICS (Advanced Front-End Technology Modeling for Ultimate Integrated Circuits) project, of which Synopsys Switzerland LLC is a partner. In addition, advancements in the integration of Sentaurus Process and Sentaurus Structure Editor are described.

This issue highlights the release of Sentaurus Lithography, the advanced lithography process simulator, which replaced the SOLID product family. Hardware acceleration of electromagnetic simulations for CIS design using Acceleware products is presented, as well as visual optimization and exploration using Sentaurus Workbench Advanced, and 45-nm circuit design using process-aware compact models.

This issue highlights the new features and enhancements in Version A-2007.12 of TCAD Sentaurus, TSUPREM-4™, and Medici. There is also a special article by Dr. Francis Benistant of Chartered Semiconductor that discusses the organization and role of TCAD teams in a modern semiconductor foundry.

This edition presents the simulation of 45-nm CMOS technology in TCAD Sentaurus and multilevel modeling of layout impact on mobility enhancements with dual stress liners using Fammos TX.

The newsletter presents articles on TCAD for electrostatic discharge, TCAD distortion analysis based on the harmonic balance method available in Sentaurus Device, setting up an efficient simulation environment for modeling single event effects with the TCAD Sentaurus tool suite, the impact of gettering effects in solar cells, and the simulation of a 4H-SiC vertical junction FET in Sentaurus Device.

This issue highlights the new features and enhancements in Version Z-2007.03 of TCAD Sentaurus, TSUPREM-4™, Davinci, and Medici. There is also an article on extreme ultraviolet (EUV) lithography simulation.

The lead article examines full process flows that include lithography and topography simulations. There is an introduction to Fammos for interconnect stress and reliability analysis, as well as articles describing the design and optimization of double-halo 45-nm CMOS technology, the simulation of nanocrystal nonvolatile flash memory, and the enhancements to Raphael™ in Version Z-2006.12.

This edition has articles on adaptive meshing for power applications using Sentaurus Process, 3D IGBT power device simulation, TCAD simulation of silicon-carbide devices, and recent developments in gallium nitride (GaN) simulation using Sentaurus Device.

This issue highlights the new features and enhancements in Version Y-2006.06 of TCAD Sentaurus, TSUPREM-4™, Davinci, and Medici. There are also articles about process simulation using atomistic, state-of-the-art, kinetic Monte Carlo models, IGBT optimization using process compact models, and the topographic applications of Sentaurus Topography.

The latest developments in Sentaurus Device with regard to advanced optoelectronic simulations are featured in this edition. CMOS image sensors, solar cells, the calculation of microscopic gain, light-emitting diodes, and lasers are discussed.

The lead article looks at TCAD as a key component of Design for Manufacturing (DFM). This is followed by articles on the calibration work of the Consulting and Engineering Group, the impact of structure representation on the extraction of interconnect capacitance, the 3D modeling of stress history, and the 3D process and device simulations of a 25-nm NMOS Omega FinFET.

This issue highlights the first release of the new TCAD Sentaurus software (Version X-2005.10), created by combining the best-in-class features of Synopsys and former ISE TCAD products. In addition, updates to TSUPREM-4™, Davinci, and Medici in Version X-2005.10 are described.

This issue addresses advanced device simulation for stress engineering, stress-enhanced mobility in embedded SiGe PMOSFETs, stress engineering for aggressively scaled bulk MOSFETs, and modeling the effect of packaging stress on reliability and device performance.

The importance and pervasiveness of TCAD tools in power electronics, power circuits, and GaN power devices are discussed. Temperature issues with regard to power devices are presented as well.

This newsletter announces the acquisition of ISE Integrated Systems Engineering AG by Synopsys. It provides information about the Synopsys TCAD product roadmap and several articles that include 3D process and device simulation of stress effects, Monte Carlo simulation of implant into strained silicon, or SiGe, and III–V heterostructures, current collapse in FETs, nonlocal trap-assisted tunneling, and design optimization of nonvolatile memory.

This edition includes articles on the use of process compact models to analyze the impact of process parameters on device characteristics, an improved process flow for 3D NMOS transistors, the simulation of GaN devices using accurate band structure and gain models, and the introduction of both the kinetic Monte Carlo method and FRENDTECH models into FLOOPS-ISE.

In addition to the presentation of process and device simulations for strained silicon CMOS devices, other articles include geometry and mesh generation for nonvolatile memories, VCSEL optimization, improvements to ISE’s visualization tool that is based on Tecplot®, and CMOS image sensor simulations.